Datasheet IRFD024 (Vishay) - 4
| Fabricante | Vishay |
| Descripción | N-Channel Power MOSFET |
| Páginas / Página | 9 / 4 — IRFD024. Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage. Fig. 6 … |
| Formato / tamaño de archivo | PDF / 425 Kb |
| Idioma del documento | Inglés |
IRFD024. Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage. Fig. 6 - Typical Source-Drain Diode Forward Voltage
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRFD024
www.vishay.com Vishay Siliconix
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C TJ = 175 °C SINGLE PULSE
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 2 - Maximum Safe Operating Area
S21-0885-Rev. D, 30-Aug-2021
4
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C TJ = 175 °C SINGLE PULSE
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 2 - Maximum Safe Operating Area
S21-0885-Rev. D, 30-Aug-2021
4
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000