Datasheet IRFD9020 (Vishay) - 2
| Fabricante | Vishay |
| Descripción | P-Channel Power MOSFET |
| Páginas / Página | 9 / 2 — IRFD9020. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| Formato / tamaño de archivo | PDF / 266 Kb |
| Idioma del documento | Inglés |
IRFD9020. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. TEST. CONDITIONS. MIN. Static. Dynamic
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IRFD9020
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA -60 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - - 0.056 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -1 μA -2.0 - -4.0 V Gate-Source Leakage IGSS VGS = 20 - - 100 nA VDS = -60 V, VGS = 0 V - - - 100 Zero Gate Voltage Drain Current IDSS μA VDS = -48 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = - 0.96 A b - - 0.28 Forward Transconductance gfs VDS = -25 V, ID = - 0.96 A b 1.3 - - S
Dynamic
Input Capacitance Ciss - 570 - VGS = 0 V, Output Capacitance Coss VDS = -25 V, - 360 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 65 - Total Gate Charge Qg - - 19 I Gate-Source Charge Qgs V D = - 11 A, VDS = -48 V, GS = -10 V - - 5.4 nC see fig. 6 and 13 b Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 13 - Rise Time tr V - 68 - DD = - 30 V, ID = -11 A, ns Rg = 18 , RD = 2.5, see fig. 10b Turn-Off Delay Time td(off) - 15 - Fall Time tf - 29 - Internal Drain Inductance L Between lead, D D - 4.0 - 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 6.0 - S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I MOSFET symbol D S - - - 1.6 showing the A integral reverse G Pulsed Diode Forward Current a ISM p - n junction diode S - - - 13 Body Diode Voltage VSD TJ = 25 °C, IS = -1.6 A, VGS = 0 V b - - - 6.3 V Body Diode Reverse Recovery Time trr - 100 200 ns TJ = 25 °C, IF = - 11A, di/dt = 100 A/μs b Body Diode Reverse Recovery Charge Qrr - 0.32 0.64 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-1506-Rev. D, 01-Aug-16
2
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA -60 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - - 0.056 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -1 μA -2.0 - -4.0 V Gate-Source Leakage IGSS VGS = 20 - - 100 nA VDS = -60 V, VGS = 0 V - - - 100 Zero Gate Voltage Drain Current IDSS μA VDS = -48 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = - 0.96 A b - - 0.28 Forward Transconductance gfs VDS = -25 V, ID = - 0.96 A b 1.3 - - S
Dynamic
Input Capacitance Ciss - 570 - VGS = 0 V, Output Capacitance Coss VDS = -25 V, - 360 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 65 - Total Gate Charge Qg - - 19 I Gate-Source Charge Qgs V D = - 11 A, VDS = -48 V, GS = -10 V - - 5.4 nC see fig. 6 and 13 b Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 13 - Rise Time tr V - 68 - DD = - 30 V, ID = -11 A, ns Rg = 18 , RD = 2.5, see fig. 10b Turn-Off Delay Time td(off) - 15 - Fall Time tf - 29 - Internal Drain Inductance L Between lead, D D - 4.0 - 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 6.0 - S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I MOSFET symbol D S - - - 1.6 showing the A integral reverse G Pulsed Diode Forward Current a ISM p - n junction diode S - - - 13 Body Diode Voltage VSD TJ = 25 °C, IS = -1.6 A, VGS = 0 V b - - - 6.3 V Body Diode Reverse Recovery Time trr - 100 200 ns TJ = 25 °C, IF = - 11A, di/dt = 100 A/μs b Body Diode Reverse Recovery Charge Qrr - 0.32 0.64 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-1506-Rev. D, 01-Aug-16
2
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000