Datasheet D15XB60 (EIC)
| Fabricante | EIC |
| Descripción | 600V, 15A Silicon Bridge Rectifier in RBV25 package |
| Páginas / Página | 2 / 1 — www.eicsemi.com. D15XB60. SILICON BRIDGE RECTIFIER. RBV25. PRV : 600 … |
| Formato / tamaño de archivo | PDF / 139 Kb |
| Idioma del documento | Inglés |
www.eicsemi.com. D15XB60. SILICON BRIDGE RECTIFIER. RBV25. PRV : 600 Volts. Io : 15 Amperes. FEATURES :. ~ ~. MECHANICAL DATA :
Línea de modelo para esta hoja de datos
Versión de texto del documento
www.eicsemi.com D15XB60 SILICON BRIDGE RECTIFIER RBV25 PRV : 600 Volts
3.9 ± 0.2
Io : 15 Amperes
C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1
FEATURES :
* High current capability 0.3± * High surge current capability 20 0.2 * High reliability ±
+ ~ ~
11 * Low reverse current * Low forward voltage drop * Ideal for printed circuit board 0.5 0.3 ± ± * Very good heat dissipation 13.5 1.0 ± 0.1 17.5 * Pb / RoHS Free
MECHANICAL DATA :
10 7.5 7.5 * Case : Reliable low cost construction 2.0 ± 0.2 ±0.2 ±0.2 ±0.2 utilizing molded plastic technique 0.7 ± 0.1 * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per
Dimensions in millimeters
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING SYMBOL VALUE UNIT
Maximum Recurrent Peak Reverse Voltage VRM 600 V Maximum Average Forward Current With heatsink, Tc = 100 °C 15 IO A (50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C 3.2 Maximum Peak Forward Surge Current, Tj = 25 °C IFSM 200 A (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, Tc = 25 °C I2t 110 A2S Maximum Forward Voltage per Diode at IF = 7.5 A VF 1.1 V ( Pulse measurement, Rating of per diode) Maximum DC Reverse Current, VR=VRM IR 10 μA ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case, With heatsink RӨJC 1.5 °C/W Maximum Thermal Resistance, Junction to Ambient, Without heatsink RӨJA 22 °C/W Maximum Thermal Resistance, Junction to Lead, Without heatsink RӨJL 5 °C/W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG - 40 to + 150 °C
Page 1 of 2 Rev. 00 : August 22, 2007
3.9 ± 0.2
Io : 15 Amperes
C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1
FEATURES :
* High current capability 0.3± * High surge current capability 20 0.2 * High reliability ±
+ ~ ~
11 * Low reverse current * Low forward voltage drop * Ideal for printed circuit board 0.5 0.3 ± ± * Very good heat dissipation 13.5 1.0 ± 0.1 17.5 * Pb / RoHS Free
MECHANICAL DATA :
10 7.5 7.5 * Case : Reliable low cost construction 2.0 ± 0.2 ±0.2 ±0.2 ±0.2 utilizing molded plastic technique 0.7 ± 0.1 * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per
Dimensions in millimeters
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING SYMBOL VALUE UNIT
Maximum Recurrent Peak Reverse Voltage VRM 600 V Maximum Average Forward Current With heatsink, Tc = 100 °C 15 IO A (50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C 3.2 Maximum Peak Forward Surge Current, Tj = 25 °C IFSM 200 A (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, Tc = 25 °C I2t 110 A2S Maximum Forward Voltage per Diode at IF = 7.5 A VF 1.1 V ( Pulse measurement, Rating of per diode) Maximum DC Reverse Current, VR=VRM IR 10 μA ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case, With heatsink RӨJC 1.5 °C/W Maximum Thermal Resistance, Junction to Ambient, Without heatsink RӨJA 22 °C/W Maximum Thermal Resistance, Junction to Lead, Without heatsink RӨJL 5 °C/W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG - 40 to + 150 °C
Page 1 of 2 Rev. 00 : August 22, 2007