Datasheet IRFR120, IRFU120, SiHFR120, SiHFU120 (Vishay) - 2

IRFR120, IRFU120, SiHFR120, SiHFU120
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THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - - 110 Maximum junction-to-ambient (PCB mount) a RthJA - - 50 °C/W Maximum junction-to-case (drain) RthJC - - 3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 4.6 A b - - 0.27 Ω Forward transconductance gfs VDS = 50 V, ID = 4.6 A 1.6 - - S
Dynamic
Input capacitance Ciss V - 360 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 150 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 34 - Total gate charge Qg - - 16 I Gate-source charge Qgs V D = 9.2 A, VDS = 80 V, GS = 10 V - - 4.4 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 7.7 Turn-on delay time td(on) - 6.8 - Rise time tr V - 27 - DD = 50 V, ID = 9.2 A, ns R Turn-off delay time t g = 18 Ω, RD = 5.2 Ω, see fig. 10 b d(off) - 18 - Fall time tf - 17 - Internal drain inductance Rg f = 1 MHz, open drain 1.0 - 5.0 Ω Internal source inductance L D D Between lead, - 4.5 - 6 mm (0.25") from nH package and center of Input capacitance L G S - 7.5 - die contact S
Drain-source body diode characteristics
Continuous source-drain diode current I MOSFET symbol S D - - 7.7 showing the A integral reverse G Pulsed diode forward current a ISM - - 31 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 130 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.65 1.3 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. S21-0466-Rev. D, 17-May-2021
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