Datasheet HER308 (Taiwan Semiconductor) - 2
| Fabricante | Taiwan Semiconductor |
| Descripción | 75ns, 3A, 1000V, High Efficient Recovery Rectifier in DO-201AD package |
| Páginas / Página | 6 / 2 — HER301G – HER308G. THERMAL PERFORMANCE. PARAMETER. SYMBOL. TYP. UNIT. … |
| Formato / tamaño de archivo | PDF / 538 Kb |
| Idioma del documento | Inglés |
HER301G – HER308G. THERMAL PERFORMANCE. PARAMETER. SYMBOL. TYP. UNIT. ELECTRICAL SPECIFICATIONS. CONDITIONS. MAX. Notes:
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HER301G – HER308G
Taiwan Semiconductor
THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT
Junction-to-lead thermal resistance RӨJL 10 °C/W Junction-to-ambient thermal resistance RӨJA 35 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
HER301G HER302G - 1.0 V HER303G HER304G Forward voltage(1) IF = 3A, TJ = 25°C VF HER305G - 1.3 V HER306G HER307G - 1.7 V HER308G TJ = 25°C - 10 µA Reverse current @ rated V (2) R IR TJ = 125°C - 200 µA HER301G HER302G HER303G 60 - pF HER304G Junction capacitance 1MHz, V HER305G R = 4.0V CJ HER306G HER307G 35 - pF HER308G HER301G HER302G HER303G - 50 ns HER304G I Reverse recovery time F = 0.5A, IR = 1.0A, HER305G t I rr rr = 0.25A HER306G HER307G - 75 ns HER308G
Notes:
1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING
HER3xG DO-201AD 1,250 / Tape & Reel HER3xG A0G DO-201AD 500 / Ammo box HER3xGH DO-201AD 1,250 / Tape & Reel HER3xGHA0G DO-201AD 500 / Ammo box
Notes:
1. "x" defines voltage from 50V (HER301G) to 1000V (HER308G) 2. “H” means AEC-Q101 qualified 2 Version: I2105
Taiwan Semiconductor
THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT
Junction-to-lead thermal resistance RӨJL 10 °C/W Junction-to-ambient thermal resistance RӨJA 35 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
HER301G HER302G - 1.0 V HER303G HER304G Forward voltage(1) IF = 3A, TJ = 25°C VF HER305G - 1.3 V HER306G HER307G - 1.7 V HER308G TJ = 25°C - 10 µA Reverse current @ rated V (2) R IR TJ = 125°C - 200 µA HER301G HER302G HER303G 60 - pF HER304G Junction capacitance 1MHz, V HER305G R = 4.0V CJ HER306G HER307G 35 - pF HER308G HER301G HER302G HER303G - 50 ns HER304G I Reverse recovery time F = 0.5A, IR = 1.0A, HER305G t I rr rr = 0.25A HER306G HER307G - 75 ns HER308G
Notes:
1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING
HER3xG DO-201AD 1,250 / Tape & Reel HER3xG A0G DO-201AD 500 / Ammo box HER3xGH DO-201AD 1,250 / Tape & Reel HER3xGHA0G DO-201AD 500 / Ammo box
Notes:
1. "x" defines voltage from 50V (HER301G) to 1000V (HER308G) 2. “H” means AEC-Q101 qualified 2 Version: I2105