Datasheet JX0320R065MT3 (JX Semiconductor) - 5
| Fabricante | JX Semiconductor |
| Descripción | 650V N-Channel MOSFET in TO247-3 package |
| Páginas / Página | 7 / 5 — JX0320R065MT3. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge … |
| Formato / tamaño de archivo | PDF / 616 Kb |
| Idioma del documento | Inglés |
JX0320R065MT3. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge Characteristics. Junction Temperature TJ (。C)
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JX0320R065MT3 Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
3 20 2.5 15 2 10 1.5 5 1 0.5 0 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 5 10 15
Junction Temperature TJ (。C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 oC Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 0 6 VGS=0V -2 5 -4
(A)
V G =5V -6 4 -8
Current,IDS
VGS=12V -10 3 VGS=15V -12 2 -14
Drain-Source
-16 1 -18 -20 0
Drain-Source Voltage VDS (V)
0 100 200 300 400 500 600 700
Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
10000 70 60 CISS 1000 50 40 100 COS 30 20 10 CRS 10 1 0 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (。C)
5 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing:
3 20 2.5 15 2 10 1.5 5 1 0.5 0 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 5 10 15
Junction Temperature TJ (。C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 oC Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 0 6 VGS=0V -2 5 -4
(A)
V G =5V -6 4 -8
Current,IDS
VGS=12V -10 3 VGS=15V -12 2 -14
Drain-Source
-16 1 -18 -20 0
Drain-Source Voltage VDS (V)
0 100 200 300 400 500 600 700
Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
10000 70 60 CISS 1000 50 40 100 COS 30 20 10 CRS 10 1 0 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (。C)
5 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing: