Datasheet SBRFP2M60P1Q (Diodes) - 2

SBRFP2M60P1Q Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 60 V DC Blocking Voltage VRM Average Rectified Output Current IO 2 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 50 A Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Avalanche Energy EAS 145 mJ (TJ = +25°C, IAS = 2A, L = 50mH) Non-Repetitive Avalanche Energy EAS 40 mJ (TJ = +25°C, IAS = 7.5A, L = 1mH) Electrostatic Discharge – Human Body Model HBM 4000 V Electrostatic Discharge – Contact Discharge Model CDM 1 kV
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) RθJA 53 °C/W Typical Thermal Resistance Junction to Case (Note 5) RθJC 10 °C/W Operating and Storage Temperature Range (Note 5) TJ, TSTG -55 to +175 °C Note: 5. Device mounted on 1inch2 copper pad, 2oz. The heat generated must be less than the thermal conductivity from junction to case: dPD/dTJ < 1/RθJC or junction to ambient: dPD/dTJ < 1/RθJA.
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.45 — IF = 1A, TJ = +25°C — 0.40 — IF = 1A, TJ = +125°C Forward Voltage Drop (Note 6) VF — V 0.52 0.58 IF = 2A, TJ = +25°C — 0.49 0.55 IF = 2A, TJ = +125°C — 1.5 12 µA VR = 60V, TJ = +25°C Leakage Current (Note 6) IR — 0.7 3 mA VR = 60V, TJ = +125°C Junction Capacitance CJ — 50 — pF VR = 60V, TJ = +25°C IF = 0.5A, IRR Reverse Recovery Time = 1A, tRR — 15 — ns IRR = 0.25A (RG1) Note: 6. Short duration pulse test used to minimize self-heating effect. SBRFP2M60P1Q 2 of 6 October 2024 Document number: DS42906 Rev. 6 - 2
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