Datasheet SBRFP2M60SAFQ (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 2A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package |
| Páginas / Página | 5 / 2 — SBRFP2M60SAFQ. Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| Formato / tamaño de archivo | PDF / 293 Kb |
| Idioma del documento | Inglés |
SBRFP2M60SAFQ. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Typ. Max
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SBRFP2M60SAFQ Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 60 V DC Blocking Voltage VRM Average Rectified Output Current IO 2 A Non-Repetitive Peak Forward Surge Current 8.3ms I Single Half Sine Wave Superimposed on Rated Load FSM 24.5 A Non-Repetitive Avalanche Energy EAS 53 mJ (TJ = +25°C, IAS = 2.2A, L = 15mH)
Thermal Characteristics Characteristic Symbol Value Unit
Thermal Resistance Junction to Case (Note 5) RθJC 37 °C/W Thermal Resistance Junction to Ambient (Note 5) RθJA 99 Operating and Storage Temperature Range (Note 6) TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.41 — V IF = 1A, TJ = +25°C — 0.35 — V IF = 1A, TJ = +125°C Forward Voltage Drop VF — 0.47 0.58 V IF = 2A, TJ = +25°C — 0.44 0.55 V IF = 2A, TJ = +125°C — 2.6 12 μA VR = 60V, TJ = +25°C Leakage Current (Note 7) IR — 0.6 3 mA VR = 60V, TJ = +125°C Junction Capacitance CJ — 51 — pF VR = 60V, TJ = +25°C IF = 0.5A, IR = 1.0A, Reverse-Recovery Time tRR — 15 — ns IRR = 0.25A, TA = +25°C Notes: 5. Device mounted on FR-4 substrate, 1" * 1", 2oz, single-sided, PC boards with 0.06" * 0.09" copper pad. 6. The heat generated must be less than the thermal conductivity from junction to case: dPD/dTJ < 1/RθJC or junction to ambient: dPD/dTJ < 1/RθJA. 7. Short duration pulse test used to minimize self-heating effect. SBRFP2M60SAFQ 2 of 5 September 2025 Document number: DS46513 Rev. 4 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 60 V DC Blocking Voltage VRM Average Rectified Output Current IO 2 A Non-Repetitive Peak Forward Surge Current 8.3ms I Single Half Sine Wave Superimposed on Rated Load FSM 24.5 A Non-Repetitive Avalanche Energy EAS 53 mJ (TJ = +25°C, IAS = 2.2A, L = 15mH)
Thermal Characteristics Characteristic Symbol Value Unit
Thermal Resistance Junction to Case (Note 5) RθJC 37 °C/W Thermal Resistance Junction to Ambient (Note 5) RθJA 99 Operating and Storage Temperature Range (Note 6) TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.41 — V IF = 1A, TJ = +25°C — 0.35 — V IF = 1A, TJ = +125°C Forward Voltage Drop VF — 0.47 0.58 V IF = 2A, TJ = +25°C — 0.44 0.55 V IF = 2A, TJ = +125°C — 2.6 12 μA VR = 60V, TJ = +25°C Leakage Current (Note 7) IR — 0.6 3 mA VR = 60V, TJ = +125°C Junction Capacitance CJ — 51 — pF VR = 60V, TJ = +25°C IF = 0.5A, IR = 1.0A, Reverse-Recovery Time tRR — 15 — ns IRR = 0.25A, TA = +25°C Notes: 5. Device mounted on FR-4 substrate, 1" * 1", 2oz, single-sided, PC boards with 0.06" * 0.09" copper pad. 6. The heat generated must be less than the thermal conductivity from junction to case: dPD/dTJ < 1/RθJC or junction to ambient: dPD/dTJ < 1/RθJA. 7. Short duration pulse test used to minimize self-heating effect. SBRFP2M60SAFQ 2 of 5 September 2025 Document number: DS46513 Rev. 4 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.