Datasheet SBRFP3M60SAFQ (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 3A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package |
| Páginas / Página | 5 / 2 — SBRFP3M60SAFQ. Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| Formato / tamaño de archivo | PDF / 355 Kb |
| Idioma del documento | Inglés |
SBRFP3M60SAFQ. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Typ. Max
Línea de modelo para esta hoja de datos
Versión de texto del documento
SBRFP3M60SAFQ Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 60 V DC Blocking Voltage VRM Average Rectified Output Current IO 3 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load IFSM 70 A Non-Repetitive Avalanche Energy E (T AS 120 mJ J = +25°C, IAS = 3.4A, L = 15mH)
Thermal Characteristics Characteristic Symbol Value Unit
Thermal Resistance Junction to Case (Note 5) RθJC 49 °C/W Thermal Resistance Junction to Ambient (Note 5) RθJA 105 Operating and Storage Temperature Range (Note 6) TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.51 0.62 V IF = 3A, TJ = +25°C Forward Voltage Drop VF — 0.48 — V IF = 3A, TJ = +125°C — 1.2 7 µA VR = 60V, TJ = +25°C Leakage Current (Note 7) IR — 0.3 — mA VR = 60V, TJ = +125°C Junction Capacitance CJ — 80 — pF VR = 60V, TJ = +25°C I Reverse-Recovery Time t F = 0.5A, IR = 1.0A, RR — 18 — ns IRR = 0.25A, TA = +25°C Notes: 5. Device mounted on FR-4 substrate, 1" × 1", 2oz, single-sided, PC boards with 0.06" × 0.09" copper pad. 6. The heat generated must be less than the thermal conductivity from junction to case: dPD/dTJ < 1/RθJC or junction to ambient: dPD/dTJ < 1/RθJA. 7. Short duration pulse test used to minimize self-heating effect. SBRFP3M60SAFQ 2 of 5 October 2025 Document number: DS46706 Rev. 4 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 60 V DC Blocking Voltage VRM Average Rectified Output Current IO 3 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load IFSM 70 A Non-Repetitive Avalanche Energy E (T AS 120 mJ J = +25°C, IAS = 3.4A, L = 15mH)
Thermal Characteristics Characteristic Symbol Value Unit
Thermal Resistance Junction to Case (Note 5) RθJC 49 °C/W Thermal Resistance Junction to Ambient (Note 5) RθJA 105 Operating and Storage Temperature Range (Note 6) TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.51 0.62 V IF = 3A, TJ = +25°C Forward Voltage Drop VF — 0.48 — V IF = 3A, TJ = +125°C — 1.2 7 µA VR = 60V, TJ = +25°C Leakage Current (Note 7) IR — 0.3 — mA VR = 60V, TJ = +125°C Junction Capacitance CJ — 80 — pF VR = 60V, TJ = +25°C I Reverse-Recovery Time t F = 0.5A, IR = 1.0A, RR — 18 — ns IRR = 0.25A, TA = +25°C Notes: 5. Device mounted on FR-4 substrate, 1" × 1", 2oz, single-sided, PC boards with 0.06" × 0.09" copper pad. 6. The heat generated must be less than the thermal conductivity from junction to case: dPD/dTJ < 1/RθJC or junction to ambient: dPD/dTJ < 1/RθJA. 7. Short duration pulse test used to minimize self-heating effect. SBRFP3M60SAFQ 2 of 5 October 2025 Document number: DS46706 Rev. 4 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.