Datasheet SBRFP8A60P5Q (Diodes) - 3
| Fabricante | Diodes |
| Descripción | 8A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI-5 package |
| Páginas / Página | 5 / 3 — SBRFP8A60P5Q. www.diodes.com |
| Formato / tamaño de archivo | PDF / 402 Kb |
| Idioma del documento | Inglés |
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SBRFP8A60P5Q
) A 100 ( 100000 T T N J = 175℃ E R 10 TJ = 150℃ R U A) 10000 T C (µ J = 125℃ D T 1 R N A E W R T T 1000 J = 85℃ J = 175℃ R U 0.1 FOR C T S J = 150℃ GE A 100 OU TJ = 125℃ E 0.01 K N A T E J = 85℃ L TA , TJ = 25℃ N I R 0.001 T 10 TA J = 25℃ S NI T J = -55℃ , I F 0.0001 1 0 200 400 600 800 0 20 40 60 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics 10000 16 f = 1MHz R E 14 F)p(E OW P 12 C ) N D R W( TJ = 175℃ TAI A 10 C W ON A P 1000 TI A 8 A FOR C P I GE S S ON I 6 A TI R D C E N V 4 U A J , P D T 2 C 100 0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 12 14 16 18 20 22 V I R, REVERSE VOLTAGE (V) F(AV), AVERAGE FORWARD CURRENT (A) Figure 3. Typical Junction Capacitance Figure 4. Forward Power Dissipation 9.00 60.0 1000 ) 8.00 J T A( U m Note 5 ( 50.0 T 7.00 TP N GY E R R OU 6.00 E R D ) 40.0 N U E A E C FI ( 5.00 E E TI T H H C N C 30.0 100 C E E 4.00 N N R R R A A L L U 3.00 A A GE C V 20.0 V A A A R . E 2.00 X X V A A A 10.0 M M , 1.00 , I O I M E M 0.00 10 0.0 25 50 75 100 125 150 175 30.0 300.0 3000.0 TA, AMBIENT TEMPERATURE (℃) tP, PULSE DURATION (µs) Figure 5. DC Forward Current Derating Figure 6. Single Pulse Max. Avalanche Energy and Current SBRFP8A60P5Q 3 of 5 September 2025 Document number: DS46703 Rev. 3 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
) A 100 ( 100000 T T N J = 175℃ E R 10 TJ = 150℃ R U A) 10000 T C (µ J = 125℃ D T 1 R N A E W R T T 1000 J = 85℃ J = 175℃ R U 0.1 FOR C T S J = 150℃ GE A 100 OU TJ = 125℃ E 0.01 K N A T E J = 85℃ L TA , TJ = 25℃ N I R 0.001 T 10 TA J = 25℃ S NI T J = -55℃ , I F 0.0001 1 0 200 400 600 800 0 20 40 60 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics 10000 16 f = 1MHz R E 14 F)p(E OW P 12 C ) N D R W( TJ = 175℃ TAI A 10 C W ON A P 1000 TI A 8 A FOR C P I GE S S ON I 6 A TI R D C E N V 4 U A J , P D T 2 C 100 0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 12 14 16 18 20 22 V I R, REVERSE VOLTAGE (V) F(AV), AVERAGE FORWARD CURRENT (A) Figure 3. Typical Junction Capacitance Figure 4. Forward Power Dissipation 9.00 60.0 1000 ) 8.00 J T A( U m Note 5 ( 50.0 T 7.00 TP N GY E R R OU 6.00 E R D ) 40.0 N U E A E C FI ( 5.00 E E TI T H H C N C 30.0 100 C E E 4.00 N N R R R A A L L U 3.00 A A GE C V 20.0 V A A A R . E 2.00 X X V A A A 10.0 M M , 1.00 , I O I M E M 0.00 10 0.0 25 50 75 100 125 150 175 30.0 300.0 3000.0 TA, AMBIENT TEMPERATURE (℃) tP, PULSE DURATION (µs) Figure 5. DC Forward Current Derating Figure 6. Single Pulse Max. Avalanche Energy and Current SBRFP8A60P5Q 3 of 5 September 2025 Document number: DS46703 Rev. 3 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.