Datasheet JX3S0070R170M (JX Semiconductor) - 3
| Fabricante | JX Semiconductor |
| Descripción | 1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package |
| Páginas / Página | 10 / 3 — JX3S0070R170M. 1700V, N-Channel, Silicon Carbide MOSFET. Body Diode … |
| Formato / tamaño de archivo | PDF / 636 Kb |
| Idioma del documento | Inglés |
JX3S0070R170M. 1700V, N-Channel, Silicon Carbide MOSFET. Body Diode Characteristics (at TJ=25°C unless otherwise specified)
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JX3S0070R170M 1700V, N-Channel, Silicon Carbide MOSFET Body Diode Characteristics (at TJ=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions
- 3.9 6 VGS=0V; IF=20A; TJ=25oC VSD Diode Forward Voltage V - 3.6 6 VGS=0V; IF=20A; TJ=175oC IS Continuous Diode Forward Current - 36 - A VGS=0V; TC=25oC trr Reverse Recovery Time - 38 - ns VGS=-5V; IF=20A; VR=1000V; Qrr Reverse Recovery Charge - 360 - nC di/dt=1000A/μs; TJ=175oC Irrm Peak Reverse Recovery Current - 10.5 - A
Thermal Characteristics Symbol Parameter Value Unit
RθJC Thermal Resistance, Junction-to-Case 0.62 oC/W RθJA Thermal Resistance, Junction-to-Ambient 40 oC/W The values are based on Junction-to-Case Thermal Impedance measured with the device mounted to a large heat sink, assuming a maximum junction temperature of TJ(max)=175oC.
Product Data Sheet
3
JXC-3T04-40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info
- 3.9 6 VGS=0V; IF=20A; TJ=25oC VSD Diode Forward Voltage V - 3.6 6 VGS=0V; IF=20A; TJ=175oC IS Continuous Diode Forward Current - 36 - A VGS=0V; TC=25oC trr Reverse Recovery Time - 38 - ns VGS=-5V; IF=20A; VR=1000V; Qrr Reverse Recovery Charge - 360 - nC di/dt=1000A/μs; TJ=175oC Irrm Peak Reverse Recovery Current - 10.5 - A
Thermal Characteristics Symbol Parameter Value Unit
RθJC Thermal Resistance, Junction-to-Case 0.62 oC/W RθJA Thermal Resistance, Junction-to-Ambient 40 oC/W The values are based on Junction-to-Case Thermal Impedance measured with the device mounted to a large heat sink, assuming a maximum junction temperature of TJ(max)=175oC.
Product Data Sheet
3
JXC-3T04-40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info