Datasheet JX3S0020120M (JX Semiconductor) - 7

JX3S0020120M 1200V, N.Channel, Silicon Carbide MOSFET Typical Performance
10 12
VGS=-5/+1 8V VGS=-5/+18V VDS=800V VDS=800V L=68μH L=68μH
10 8
R Ω I G(ext)=2.5 D =50A ID =50A Etotal
8 6 Etotal 6 E
E
on
on
4 4 Eoff
Eoff
2 2 0 0 0 20 40 60 80 100 0 3 6 9 12 15 18
Drain-Source Current, I External Gate Resistor, RG(ext) (Ohms) DS (A) Figure 13 Figure 14
Switching Energy vs. Drain Current Switching Energy vs. RG(ext) 5 200
VGS=-5/+18V VDS=800V VGS=-5/+20V L=68μH ID =50A VDS=800V RG(ext)=2.5Ω L=68μH
4 160
ID =50A td(off) Etotal
3 120
tr Eon t
2 80
f Eoff td(on)
1 40 0 0 0 25 50 75 100 125 150 175 200 0 5 10 15 20
Junction Temperature, T External Gate Resistor, RG(ext) (Ohms) J (°C) Figure 15 Figure 16
Switching Energy vs. Temperature Switching Times vs. RG(ext)
Product Data Sheet
7
JX.3T04.27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info