Datasheet JX3S0040120M (JX Semiconductor) - 4

JX3S0040120M Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C)
120 120 VGS= 20V VGS=20V 100 VGS=18V 100 VG S =18V 80 VGS =16V 80 VGS = 1 6 V 60 60 V G S = 1 2 V VGS=12V 40 40 V GS=8V 20 20 VGS=8V 0 0 0 2 4 6 8 10 12
Drain- Source Voltage, V
0 2 4 6 8 10 12
DS (V) Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 120 1.8 1.6 100 1.4 1.2 80 VG S=16 V 1 60 0.8 VGS=18V 0.6 VGS=20V 40 0.4 0.2 20 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ( C) Junction Temperature, Tj ( C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 C
-10 -8 -6 -4 -2 0 160 0 140 VGS=-4V VGS=0V -20 120
(A)
T ℃ VGS=-2V -40 100 J=150 80 TJ=25℃
Current,IDS
-60 60 TJ=-40℃ -80 40
Drain-Source
20 -100 0 0 5 10 15 -120
Gate-Source Voltage, VGS (V) Drain- Source Voltage VDS ( V)
4 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area