Datasheet JX4S0020120M (JX Semiconductor) - 6

JX4S0020120M Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
1.2 8
VGS=-5/ +20 V VGS=-5/+20 V VDS = 8 00V
7
VDS = 800V
1
L=68uH L=68uH
Etotal 6
RG(ext) =2.5Ω RG(ext)=2.5Ω
Etotal 0.8 5 Eon 0.6 4 Eon 3 0.4 E Eoff off 2 0.2 1 0 0 0 20 40 60 80 100 120 0 5 10 15 20
Drain to Source Current, IDS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
3.5 250
VGS=-5/+20 V VGS=-5/+20 V
Etotal
VDS = 800V
3
VDS = 800V
tdoff
L=68uH L=68uH
200
RG(ext)=2.5Ω RG(ext)=2.5 Ω
2.5 Eon 150 2 tdon 1.5 100 tr 1 Eoff 50 t 0.5 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20
Junction Temperature,T External Gate Resistor RG(ext) (Ohms) J ( C) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
1.000 1000 10us 100 0.5 100us 0.3 0.100 1ms 10 0.1 100ms 0.05 1 0.02 0.010 0.01 0.1 Single Pluse 0.001 0.01 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0.1 10 1000
Time, tp (s) Drain-Source Voltage, VDS (V)
6 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area