Preliminary Datasheet EPC2103 (Efficient Power Conversion) - 5

EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Figure 4a: EPC2103-Q1: RDS(on) vs. VGS for Various Temperatures Figure 4b: EPC2103-Q2: RDS(on) vs. VGS for Various Temperatures 12 12 Ω)
25 °C
Ω)
25 °C
m m ( 10
125 °C
( 10
125 °C
ce ce an an 8 I I st D = 20 A 8 st D = 20 A esi esi R R 6 e 6 e tat tat -S 4 -S 4 On On - - ) ) n n o 2 o 2 S( S( D D R R 0 0 2.5 3 3.5 4 4.5 5 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Figure 5a: EPC2103-Q1: Capacitance (Linear Scale) Figure 5b: EPC2103-Q2: Capacitance (Linear Scale) 1.4 2
CO
C
SS = CGD + CSD
1.8
CO
C
SS = CGD + CSD
OSS = CGD +CSD 1.2 OSS = CGD +CSD
CIS
C
S = CGD + CGS
1.6
CIS
C
S = CGD + CGS
RSS = CGD RSS = CGD ) 1 ) F
CRS
C
S = CGD
F 1.4 C = C + C ISS = CGD + CGS
CRS
I
S
SS
= CG
GD
D
GS (n (n 1.2 ce 0.8 ce tan 1 tan 0.6 aci aci 0.8 ap ap C 0.4 0.6 C 0.4 0.2 0.2 0 0 0 20 40 60 80 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 5c: EPC2103-Q1: Capacitance (Log Scale) Figure 5d: EPC2103-Q2: Capacitance (Log Scale) 10 10 1 1 ) ) F F (n (n ce
CO
C
SS = CGD + CSD
OSS = CGD +CSD ce
CO
C
SS = CGD + CSD
OSS = CGD +CSD 0.1 tan
CIS
C
S
0.1 R
=
SS
CG
= C
D +
GD
CGS
tan
CIS
C
S
R
=
SS
CG
= C
D +
GD
CGS
aci C aci ISS = CGD + CGS CISS = CGD + CGS ap
CRSS = CGD
ap
CRSS = CGD
C C 0.01 0.01 0.001 0.001 0 20 40 60 80 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
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