Datasheet SIR662DP-T1-GE3 - Vishay MOSFET, N CH, DIO, 60 V, 60 A, PPK SO8 — Ficha de datos
Part Number: SIR662DP-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N CH, DIO, 60 V, 60 A, PPK SO8
Docket:
New Product
SiR662DP
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 60 A
- Drain Source Voltage Vds: 60 V
- Number of Pins: 8
- On Resistance Rds(on): 0.0022 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 104 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
RoHS: Yes
Otros nombres:
SIR662DPT1GE3, SIR662DP T1 GE3