Datasheet SIR808DP-T1-GE3 - Vishay MOSFET, N CH, DIO, 25 V, 20 A, PPK SO8 — Ficha de datos
Part Number: SIR808DP-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N CH, DIO, 25 V, 20 A, PPK SO8
Docket:
SiR808DP
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
FEATURES
ID (A)a, g 20 20 Qg (Typ.) 7.5 nC
Specifications:
- Continuous Drain Current Id: 20 A
- Drain Source Voltage Vds: 25 V
- Number of Pins: 8
- On Resistance Rds(on): 0.0074 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 29.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
RoHS: Yes
Otros nombres:
SIR808DPT1GE3, SIR808DP T1 GE3