Datasheet SIR870DP-T1-GE3 - Vishay MOSFET, N CH, DI, 100 V, 60 A, PPK SO8 — Ficha de datos

Part Number: SIR870DP-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, DI, 100 V, 60 A, PPK SO8

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Docket:
New Product
SiR870DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 60 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.005 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 104 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

SIR870DPT1GE3, SIR870DP T1 GE3