Datasheet SI4909DY-T1-GE3 - Vishay MOSFET, PP CH, W/D DIOD, 40 V, 8 A, SO8 — Ficha de datos

Vishay SI4909DY-T1-GE3

Part Number: SI4909DY-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, PP CH, W/D DIOD, 40 V, 8 A, SO8

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Docket:
New Product
Si4909DY
Vishay Siliconix
Dual P-Channel 40 V (D-S) MOSFET
FEATURES

Specifications:

  • Continuous Drain Current Id: -8 A
  • Drain Source Voltage Vds: -40 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.021 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 3.2 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel

RoHS: Yes

Otros nombres:

SI4909DYT1GE3, SI4909DY T1 GE3