Datasheet SIHB30N60E-GE3 - Vishay MOSFET, N CH, 600 V, 29 A, D2PAK — Ficha de datos

Vishay SIHB30N60E-GE3

Part Number: SIHB30N60E-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, 600 V, 29 A, D2PAK

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Docket:
SiHB30N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 29 A
  • Drain Source Voltage Vds: 600 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.104 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 250 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

SIHB30N60EGE3, SIHB30N60E GE3