Datasheet PMBFJ112 - NXP TRANSISTOR, JFET, N, RF, SOT-23 — Ficha de datos

NXP PMBFJ112

Part Number: PMBFJ112

Descripción detallada

Manufacturer: NXP

Description: TRANSISTOR, JFET, N, RF, SOT-23

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Docket:
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
Rev.

4 -- 20 September 2011 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Breakdown Voltage Vbr: 40 V
  • Current Idss Min: 5 mA
  • Current Ig: 50 mA
  • Drain Source Voltage Vds: 40 V
  • Gate-Source Cutoff Voltage Vgs(off) Max: 3 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • On State Resistance Max: 50 Ohm
  • Package / Case: SOT-23
  • Pin Configuration: D(1), S(2), G(3)
  • Power Dissipation Max: 300 mW
  • Power Dissipation: 300 mW
  • SVHC: No SVHC (19-Dec-2011)
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Transistor Type: JFET
  • Voltage Vgs Off Min: -10 V
  • Zero Gate Voltage Drain Current Idss: 5 mA

RoHS: Yes