Datasheet BSP135 L6327 - Infineon MOSFET, N-CH, 600 V, 120 mA, SOT-223 — Ficha de datos

Infineon BSP135 L6327

Part Number: BSP135 L6327

Descripción detallada

Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 120 mA, SOT-223

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Docket:
BSP135
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with V GS(th) indicator on reel · Pb-free lead plating; RoHS compliant · Qualified according to AEC Q101
Product Summary VDS RDS(on),max IDSS,min 600 60 0.02 V W A
PG-SOT223

Specifications:

  • Continuous Drain Current Id: 120 mA
  • Drain Source Voltage Vds: 600 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 4
  • On Resistance Rds(on): 25 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1.8 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: -1.4 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • RoHS: Yes