Datasheet BSS126 H6327 - Infineon MOSFET, N-CH, 600 V, 21 mA, SOT23 — Ficha de datos

Infineon BSS126 H6327

Part Number: BSS126 H6327

Descripción detallada

Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 21 mA, SOT23

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Docket:
BSS126
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with VGS(th) indicator on reel · Pb-free lead plating; RoHS compliant · Qualified according to AEC Q101 · Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max IDSS,min 600 700 V
0.007 A PG-SOT-23

Specifications:

  • Continuous Drain Current Id: 21 mA
  • Drain Source Voltage Vds: 600 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 280 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 500 mW
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: -2 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • RoHS: Yes