Datasheet BUK9E1R6-30E - NXP MOSFET, N-CH, 30 V, 120 A, I2PAK — Ficha de datos

NXP BUK9E1R6-30E

Part Number: BUK9E1R6-30E

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N-CH, 30 V, 120 A, I2PAK

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Docket:
BUK9E1R6-30E
11 September 2012
N-channel TrenchMOS logic level FET
Product data sheet
1.

Product profile

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 30 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 1400µ Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 349 W
  • Rds(on) Test Voltage Vgs: 5 V
  • Threshold Voltage Vgs Typ: 1.7 V
  • Transistor Case Style: TO-262
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex
  • SVHC: No SVHC (18-Jun-2012)

Otros nombres:

BUK9E1R630E, BUK9E1R6 30E