Datasheet International Rectifier IRF530A — Ficha de datos

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A
BVDSS = 100 V RDS(on) = 0.11 ID = 14 A
TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Value 100 14 9.9
1 O Units V A A V mJ A mJ V/ns W W/ C Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) 56 + 20 _ 261 14 5.5 6.5 55 0.36 -55 to +175 O 1 O 1 O 3 O
2 Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds C 300 Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 2.74 -62.5 Units
C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRF530A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----0.11 --10.25 610 150 62 13 14 55 36 27 4.5 12.8 -4.0 100 -100 10 100 0.11 -790 175 72 40 40 110 80 36 -nC ns pF µA V Test Condition VGS=0V,ID=250 µA See Fig 7 VDS=5V,ID=250 µA V/ C ID=250 µA V nA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=7A VDS=40V,ID=7A
4 O 4 O VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, RG=12 See Fig 13 VDS=80V,VGS=10V, ID=14A See Fig 6 & Fig 12
4 5 OO 4 5 OO Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O Min. Typ. Max. Units --109 0.41 14 56 1.5 -A V ns ҐмC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=14A,VG …