CSD16323Q3C
www.ti.com SLPS248 – AUGUST 2010 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16323Q3C PRODUCT SUMMARY FEATURES 1 2 DualCoolв„ў Package
Optimized for 5V Gate Drive
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.2 nC Qgd Gate Charge Gate to Drain RDS(on) 1.1 Drain to Source On Resistance Vth nC VGS = 3V 5.4 mΩ VGS = 4.5V 4.4 mΩ VGS = 8V 3.8 mΩ Threshold Voltage 1.1 V ORDERING INFORMATION
Device Package Media CSD16323Q3C SON 3.3-mm Г— 3.3-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel APPLICATIONS Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control or Synchronous FET
Applications ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C(2) 112 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 50A, L = 0.1mH, RG = 25Ω 125 mJ ID DESCRIPTION …
