Datasheet Texas Instruments V62/11601-02YE — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | UCC27322-EP |
| Numero de parte | V62/11601-02YE |
Producto mejorado Single 9-A Controlador MOSFET de lado bajo de alta velocidad con Enable 8-SOIC -55 a 125
Hojas de datos
Single 9-A High Speed Low-Side MOSFET Driver With Enable datasheet
PDF, 1.0 Mb, Revisión: C, Archivo publicado: marzo 15, 2013
Extracto del documento
Estado
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí |
Embalaje
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 27322M |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | Descargar |
Paramétricos
| Fall Time | 20 ns |
| Input Threshold | CMOS,TTL |
| Input VCC(Max) | 15 V |
| Input VCC(Min) | 4 V |
| Number of Channels | 1 |
| Operating Temperature Range | -40 to 105,-55 to 125 C |
| Package Group | SOIC |
| Peak Output Current | 9 A |
| Power Switch | MOSFET,IGBT |
| Prop Delay | 25 ns |
| Rating | HiRel Enhanced Product |
| Rise Time | 20 ns |
| Special Features | Enable Pin |
Plan ecológico
| RoHS | Obediente |
Linea modelo
Serie: UCC27322-EP (6)
- UCC27322MDEP UCC27322MDREP UCC27322TDGKREP V62/11601-01XE V62/11601-02YE V62/11601-02YE-T
Clasificación del fabricante
- Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver
Otros nombres:
V62/1160102YE, V62/11601 02YE