Datasheet Texas Instruments UC3708NE — Ficha de datos

FabricanteTexas Instruments
SerieUC3708
Numero de parteUC3708NE
Datasheet Texas Instruments UC3708NE

Controladores de potencia de alta velocidad sin inversión 16-PDIP 0 a 70

Hojas de datos

Dual Non-Inverting Power Driver datasheet
PDF, 1.0 Mb, Revisión: C, Archivo publicado: sept 25, 2007
Extracto del documento

Precios

Estado

Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricante

Embalaje

Pin16
Package TypeN
Industry STD TermPDIP
JEDEC CodeR-PDIP-T
Package QTY25
CarrierTUBE
Device MarkingUC3708NE
Width (mm)6.35
Length (mm)19.3
Thickness (mm)3.9
Pitch (mm)2.54
Max Height (mm)5.08
Mechanical DataDescargar

Plan ecológico

RoHSObediente

Notas de aplicación

  • DN-35 IGBT Drive Using MOSFET Gate Drivers
    PDF, 54 Kb, Archivo publicado: sept 5, 1999
    The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices
  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, Archivo publicado: sept 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, Archivo publicado: sept 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

Linea modelo

Clasificación del fabricante

  • Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver