Datasheet Texas Instruments CSD19505KTT — Ficha de datos

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SLPS587 – MARCH 2016 CSD19505KTT 80 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
D2PAK Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 76 nC Qgd Gate Charge Gate to Drain 11 RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC VGS = 6 V 2.9 mΩ VGS = 10 V 2.6 mΩ 2.6 V Device Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control DEVICE QTY MEDIA PACKAGE SHIP CSD19505KTT 500 CSD19505KTTT 50 13-Inch
Reel D2PAK Plastic Package Tape &
Reel 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 80-V, 2.6-mО©, D2PAK (TO-263) NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications. TA = 25В°C VALUE UNIT SPACE VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package
Limited) 200 A Continuous Drain Current (Silicon Limited),
TC = 25В°C 212 A Continuous Drain Current (Silicon Limited),
TC = 100В°C 150 A IDM Pulsed Drain Current(1) 400 A PD Power Dissipation 300 W TJ, …