Datasheet Texas Instruments CSD13306W — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD13306W |
CSD13306W 12 V N-Channel NexFET® „MOSFET de potencia
Hojas de datos
CSD13306W 12 V N Channel NexFET Power MOSFET datasheet
PDF, 611 Kb, Archivo publicado: marzo 16, 2015
Extracto del documento
Precios
Estado
| CSD13306W | CSD13306WT | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí | No |
Embalaje
| CSD13306W | CSD13306WT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | YZC | YZC |
| Industry STD Term | DSBGA | DSBGA |
| JEDEC Code | R-XBGA-N | R-XBGA-N |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 13306 | 13306 |
| Width (mm) | 1.8 | 1.8 |
| Length (mm) | 1.5 | 1.5 |
| Thickness (mm) | 2 | 2 |
| Pitch (mm) | .5 | .5 |
| Max Height (mm) | 1 | 1 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD13306W | CSD13306WT |
|---|---|---|
| Configuration | Single | Single |
| IDM, Max Pulsed Drain Current(Max), A | 44 | 44 |
| Package, mm | WLP 1.0x1.5 | WLP 1.0x1.5 |
| QG Typ, nC | 8.6 | 8.6 |
| QGD Typ, nC | 3.0 | 3.0 |
| RDS(on) Typ at VGS=4.5V, mOhm | 8.8 | 8.8 |
| Rds(on) Max at VGS=4.5V, mOhms | 10.2 | 10.2 |
| VDS, V | 12 | 12 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 1.0 | 1.0 |
Plan ecológico
| CSD13306W | CSD13306WT | |
|---|---|---|
| RoHS | Obediente | Obediente |
Linea modelo
Serie: CSD13306W (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor