Datasheet Texas Instruments CSD17559Q5 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD17559Q5 |
NexFET de canal N de 30 V „ў MOSFET de alimentación
Hojas de datos
CSD17559Q5 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 409 Kb, Revisión: A, Archivo publicado: sept 9, 2014
Extracto del documento
Estado
| CSD17559Q5 | CSD17559Q5T | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No | Sí |
Embalaje
| CSD17559Q5 | CSD17559Q5T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQH | DQH |
| Industry STD Term | VSON-CLIP | VSON-CLIP |
| JEDEC Code | R-PSSO-N | R-PSSO-N |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD17559 | CSD17559 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | 1 | 1 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.05 | 1.05 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD17559Q5 | CSD17559Q5T |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 257 | 257 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 39 | 39 |
| QGD Typ, nC | 9.3 | 9.3 |
| RDS(on) Typ at VGS=4.5V, mOhm | 1.15 | 1.15 |
| Rds(on) Max at VGS=10V, mOhms | 1.15 | 1.15 |
| Rds(on) Max at VGS=4.5V, mOhms | 1.5 | 1.5 |
| VDS, V | 30 | 30 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.4 | 1.4 |
Plan ecológico
| CSD17559Q5 | CSD17559Q5T | |
|---|---|---|
| RoHS | Obediente | Obediente |
| Pb gratis | Sí | Sí |
Notas de aplicación
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Archivo publicado: nov 16, 2011
Linea modelo
Serie: CSD17559Q5 (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor