Datasheet Texas Instruments CSD17579Q3A — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD17579Q3A |
CSD17579Q3A 30 V N-Channel NexFET® MOSFET de potencia
Hojas de datos
CSD17579Q3A 30 V N-Channel NexFETв„ў Power MOSFETs datasheet
PDF, 689 Kb, Revisión: A, Archivo publicado: enero 14, 2016
Extracto del documento
Precios
Estado
| CSD17579Q3A | CSD17579Q3AT | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No | Sí |
Embalaje
| CSD17579Q3A | CSD17579Q3AT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DNH | DNH |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 17579 | 17579 |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | .8 | .8 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD17579Q3A | CSD17579Q3AT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 39 | 39 |
| IDM, Max Pulsed Drain Current(Max), A | 106 | 106 |
| Package, mm | SON3x3 | SON3x3 |
| QG Typ, nC | 5.3 | 5.3 |
| QGD Typ, nC | 1.2 | 1.2 |
| RDS(on) Typ at VGS=4.5V, mOhm | 11.8 | 11.8 |
| Rds(on) Max at VGS=10V, mOhms | 10.2 | 10.2 |
| Rds(on) Max at VGS=4.5V, mOhms | 14.2 | 14.2 |
| VDS, V | 30 | 30 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.5 | 1.5 |
Plan ecológico
| CSD17579Q3A | CSD17579Q3AT | |
|---|---|---|
| RoHS | Obediente | Obediente |
Linea modelo
Serie: CSD17579Q3A (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor