Datasheet IRFL4105PBF - International Rectifier MOSFET, N, SOT-223 — Ficha de datos

International Rectifier IRFL4105PBF

Part Number: IRFL4105PBF

Descripción detallada

Manufacturer: International Rectifier

Description: MOSFET, N, SOT-223

Docket:
PD- 95319
IRFL4105PbF
HEXFET® Power MOSFET
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Simulation Model

Specifications:

Continuous Drain Current Id: 3.7 A
Current Id Max: 3.7 A
Current Temperature: 25°C
Drain Source Voltage Vds: 55 V
External Depth: 7.3 mm
External Length / Height: 1.7 mm
External Width: 6.7 mm
Full Power Rating Temperature: 25°C
Mounting Type: SMD
Number of Pins: 3
Number of Transistors: 1
On Resistance Rds(on): 45 MOhm
Package / Case: SOT-223
Power Dissipation Pd: 2.1 W
Pulse Current Idm: 30 A
Rds(on) Test Voltage Vgs: 10 V
SMD Marking: FL4105
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: SOT-223
Transistor Polarity: N Channel
Voltage Vds Typ: 55 V
Voltage Vgs Max: 4 V
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2 V

RoHS: Y-Ex

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