Datasheet IRF7509TRPBF - International Rectifier MOSFET, NP — Ficha de datos
Part Number: IRF7509TRPBF
Descripción detallada
Manufacturer: International Rectifier
Description: MOSFET, NP
Docket:
PD - 95397
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description
l l
S1 G1 S2 G2
Specifications:
- Cont Current Id N Channel: 2.7 A
- Cont Current Id P Channel: 2 A
- Continuous Drain Current Id: 2.7 A
- Current Id Max: 2.7 A
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 110 MOhm
- On State Resistance @ Vgs = 10V N Channel: 900 MOhm
- On State Resistance @ Vgs = 10V P Channel: 170 MOhm
- On State Resistance @ Vgs = 4.5V N Channel: 140 MOhm
- On State Resistance @ Vgs = 4.5V P Channel: 300 MOhm
- Package / Case: Micro8
- Power Dissipation: 1.25 W
- Pulse Current Idm N Channel: 21 A
- Pulse Current Idm P Channel: 16 A
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (19-Dec-2011)
- Transistor Case Style: µSOIC
- Transistor Polarity: N and P Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds N Channel: 10 V
- Voltage Vgs Rds P Channel: 10 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes