Datasheet Microchip TC7920K6-G — Ficha de datos

Supertex inc. TC7920 Two Pair, N-and P-Channel
Enhancement-Mode MOSFET with Drain-Diodes
Features General Description в–єв–є High voltage Vertical DMOS technology
в–єв–є Integrated drain output high voltage diodes
в–єв–є Integrated gate-to-source resistor
в–єв–є Integrated gate-to-source Zener diode
в–єв–є Low threshold, Low on-resistance
в–єв–є Low input & output capacitance
в–єв–є Fast switching speeds
в–єв–є Electrically isolated N-and P-MOSFET pairs The Supertex TC7920 consists of two pairs of high voltage, low
threshold N-channel and P-channel MOSFETs in a 12-Lead
DFN package. All MOSFETs have integrated the output drain
high voltage diodes, gate-to-source resistors and gate-to-source
Zener diode clamps which are desired for high voltage pulser
applications. The complimentary, high-speed, high voltage, gateclamped N and P-channel MOSFET pairs utilize an advanced
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent
in MOS devices. Applications в–єв–є High voltage pulsers
в–єв–є Amplifiers
в–єв–є Buffers
в–єв–є Piezoelectric transducer drivers …