Datasheet Microchip TC8220K6-G — Ficha de datos

Supertex inc. TC8220 Two Pair, N-and P-Channel
Enhancement-Mode MOSFET
Features General Description в–єв–є High voltage Vertical DMOS technology
в–єв–є Integrated gate-to-source resistor
в–єв–є Integrated gate-to-source Zener diode
в–єв–є Low threshold, Low on-resistance
в–єв–є Low input & output capacitance
в–єв–є Fast switching speeds
в–єв–є Electrically isolated N-and P-MOSFET pairs The Supertex TC8220 consists of two pairs of high voltage, low
threshold N-channel and P-channel MOSFETs in a 12-Lead DFN
package. All MOSFETs have integrated the gate-to-source resistors
and gate-to-source Zener diode clamps which are desired for high
voltage pulser applications. The complimentary, high-speed, high
voltage, gate-clamped N and P-channel MOSFET pairs utilize an
advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Applications в–єв–є High voltage pulsers
в–єв–є Amplifiers
в–єв–є Buffers
в–єв–є Piezoelectric transducer drivers
в–єв–є General purpose line drivers …