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Complementary power transistors in TO-247 package
Extracto del documento
TIP35C
TIP36C
Complementary power transistors
Features . ■ Low collector-emitter saturation voltage ■ Complementary NPN -PNP transistors Applications
■ General purpose ■ Audio amplifier 3
2
1 TO-247 Description
The devices are manufactured in planar
technology with "base island" layout. The
resulting transistors show exceptional high gain
performance coupled with very low saturation
voltage. Table 1. Figure 1. Internal schematic diagrams Device summary Order code Marking TIP35C TIP35C TIP36C TIP36C September 2008 Rev 5 Package Packaging TO-247 Tube 1/9
www.st.com 9 Electrical ratings 1 TIP35C -TIP36C Electrical ratings
Table 2. Absolute maximum ratings Symbol Parameter Value
NPN TIP35C PNP TIP36C Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 25 A Collector peak current (tP < 5 ms) 50 A Base current 5 A 125 W -65 to 150 °C 150 °C Value Unit 1 °C/W IC
ICM
IB
Ptot Total dissipation at Tcase = 25 °C Tstg Storage temperature TJ Max. operating junction temperature For PNP type voltage and current values are negative. Table 3.
Symbol
Rthj-case 2/9 Thermal data
Parameter
Thermal resistance junction-case max TIP35C -TIP36C 2 Electrical characteristics Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
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