Datasheet Texas Instruments XLMG1210RVRT — Ficha de datos

FabricanteTexas Instruments
SerieLMG1210
Numero de parteXLMG1210RVRT
Datasheet Texas Instruments XLMG1210RVRT

200V, 1.5A / 3A Driver de medio puente GaN con tiempo muerto ajustable 19-WQFN -40 a 125

Hojas de datos

LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Kb, Archivo publicado: feb 14, 2018
Extracto del documento

Precios

Estado

Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricante

Embalaje

Pin19
Package TypeRVR
Package QTY250
CarrierSMALL T&R
Width (mm)4
Length (mm)3
Thickness (mm)0.75
Mechanical DataDescargar

Paramétricos

Bus Voltage200 V
Driver ConfigurationHalf Bridge
Fall Time0.5 ns
Input ThresholdTTL
Input VCC(Max)18 V
Input VCC(Min)6 V
Number of Channels2
Operating Temperature Range-40 to 125 C
Package GroupWQFN
Package Size: mm2:W x L19WQFN: 12 mm2: 4 x 3(WQFN) PKG
Peak Output Current3 A
Power SwitchMOSFET,GaNFET
Prop Delay10 ns
RatingCatalog
Rise Time0.5 ns

Plan ecológico

RoHSSee ti.com

Kits de diseño y Módulos de evaluación

  • Evaluation Modules & Boards: LMG1210EVM-012
    LMG1210 Half-bridge Open Loop Evaluation Module
    Estado del ciclo de vida: Activo (Recomendado para nuevos diseños)

Notas de aplicación

  • Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN Driver
    PDF, 139 Kb, Archivo publicado: feb 14, 2018
    Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead

Linea modelo

Serie: LMG1210 (3)

Clasificación del fabricante

  • Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers