Datasheet New Jersey Semiconductor IRFP362 — Ficha de datos
| Fabricante | New Jersey Semiconductor |
| Serie | IRFP362 |
| Numero de parte | IRFP362 |
Trans MOSFET N-CH 400V 23A 3-Pin (3 + Tab) TO-247AD
Hojas de datos
Datasheet IRFP360, IRFP362
PDF, 650 Kb, Archivo subido: jun 22, 2018, Páginas: 2
Avalanche-Energy-Rated N-Channel Power MOSFETs
Avalanche-Energy-Rated N-Channel Power MOSFETs
Extracto del documento
Paramétricos
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Material | Si |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Power Dissipation | 300000 mW |
| Number of Elements per Chip | 1 |
| Operating Temperature Max | 150 °C |
| Operating Temperature Min | -55 °C |
Otras opciones
Clasificación del fabricante
- MOSFET