Datasheet Infineon IRL3705N — Ficha de datos

IRL3705NPbF
HEXFET® Power MOSFET 
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 Logic -Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free D G
S Description
Fifth Generation HEXFETs utilize advanced
processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all …