Datasheet Infineon IPP230N06L3 G — Ficha de datos

Type IPB230N06L3 G IPP230N06L3 G OptiMOS^TM3Power-Transistor Product Summary Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters V DS 60 V R DS(on),max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21 Type IPB230N06L3 G IPP230N06L3 G Package PG-TO263-3 PG-TO220-3 Marking 230N06L 230N06L Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 30 T C=100 °C 21 Unit
A Pulsed drain current2) I D,pulse T C=25 °C 120 Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω 13 mJ Gate source voltage V GS ±20 V Power dissipation P tot 36 W Operating and storage temperature T j, T stg -55 . 175 °C T C=25 °C 1) J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
2) Rev. 2.2 page 1 2010-01-22 IPB230N06L3 G IPP230N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. -4.2 minimal footprint -62 6 cm² cooling area 4) -40 60 -Thermal characteristics
Thermal resistance, junction -case R thJC Thermal resistance, R thJA junction -ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V,
T j=25 °C -0.1 1 V DS=60 V, V GS=0 V,
T j=125 °C -10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V -1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=30 A -19.0 23 mΩ V GS=4.5 V, I D=15 A -28.6 40.8 V GS=10 V, I D=30 A,
(SMD) -18.7 23.0 V GS=4.5 V, I D=15 A,
(SMD) -28.3 40.8 -0.9 -Ω 16 31 -S Drain-source on-state resistance R DS(on) Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max,
I D=30 A 4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain …