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Silicon PNP epitaxial planar type
Extracto del documento
Composite Transistors XN02401 (XN2401)
Silicon PNP epitaxial planar type
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
5 • Two elements incorporated into one package
(Base-coupled transistors)
• Reduction of the mounting area and assembly cost by one half 2 1 (0.65) 0.30+0.10
–0.05 ■ Basic Part Number 0.4±0.2 4 1.50+0.25
–0.05 3 2.8+0.2
–0.3 ■ Features 0.16+0.10
–0.06 5˚ For general amplification Unit VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V IC −100 mA ICP −200 mA PT 300 mW Tj 150 °C Tstg −55 to +150 °C Collector current Peak collector current Total power dissipation
Junction temperature
Storage temperature 1: Collector (Tr1)
2: Collector (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74A e) Symbol typ Parameter 4: Base
5: Emitter (Tr1) M
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