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N-Channel 150-V (D-S) 175 °C MOSFET
Extracto del documento
SUD25N15-52
Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 •
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• TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC APPLICATIONS
TO-252 • Primary Side Switch D Drain Connected to Tab
G D S
G Top View
Ordering Information:
SUD25N15-52-E3 (Lead (Pb)-free) S
N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C
TC = 125 °C 14.5
50 Continuous Source Current (Diode Conduction) IS 25 Avalanche Current IAR 25 EAR 31 Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
Maximum Power Dissipation L = 0.1 mH
TC = 25 °C
TA = 25 °C A mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 25 ID …