Datasheet ON Semiconductor MOC8204SR2M — Ficha de datos

DATA SHEET
www.onsemi.com 6-Pin DIP High Voltage
Phototransistor
Optocouplers 6
1
PDIP6
CASE 646BY 4N38M, H11D1M, H11D3M,
MOC8204M
Description The 4N38M, H11D1M, H11D3M and MOC8204M are
phototransistor−type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high voltage NPN
silicon phototransistor. The device is supplied in a standard plastic
six−pin dual−in−line package.
Features • High Voltage: MOC8204M, BVCEO = 400 V
♦ H11D1M, BVCEO = 300 V
♦ H11D3M, BVCEO = 200 V
Safety and Regulatory Approvals:
♦ UL1577, 4,170 VACRMS for 1 Minute
DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
♦ •
• Applications •
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