Datasheet 4N38M, H11D1M, H11D3M, MOC8204M (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | 6-pin DIP High Voltage Phototransistor Output Optocoupler |
| Páginas / Página | 10 / 1 — DATA SHEET. www.onsemi.com. PDIP6. CASE 646BY. Description. CASE 646BZ. … |
| Formato / tamaño de archivo | PDF / 350 Kb |
| Idioma del documento | Inglés |
DATA SHEET. www.onsemi.com. PDIP6. CASE 646BY. Description. CASE 646BZ. CASE 646BX. MARKING DIAGRAM. Features. Applications
Línea de modelo para esta hoja de datos
Versión de texto del documento
DATA SHEET www.onsemi.com
6-Pin DIP High Voltage Phototransistor Optocouplers 6 1 4N38M, H11D1M, H11D3M,
PDIP6 CASE 646BY
MOC8204M
Description
6 The 4N38M, H11D1M, H11D3M and MOC8204M are 6 1 1 phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN
PDIP6 PDIP6 CASE 646BZ CASE 646BX
silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package.
MARKING DIAGRAM Features
• High Voltage: ON ♦ MOC8204M, BVCEO = 400 V H11D1 ♦ H11D1M, BVCEO = 300 V VXYYQ ♦ H11D3M, BVCEO = 200 V • Safety and Regulatory Approvals: ON = Company Logo ♦ UL1577, 4,170 VACRMS for 1 Minute H11D1 = Specific Device Code • DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with
Applications
this option) • Power Supply Regulators X = One−Digit Year Code YY = Digit Work Week • Digital Logic Inputs Q = Assembly Package Code • Microprocessor Inputs • Appliance Sensor Systems
ORDERING INFORMATION
• Industrial Controls See detailed ordering and shipping information on page 410 of this data sheet. © Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0 MOC8204M/D
6-Pin DIP High Voltage Phototransistor Optocouplers 6 1 4N38M, H11D1M, H11D3M,
PDIP6 CASE 646BY
MOC8204M
Description
6 The 4N38M, H11D1M, H11D3M and MOC8204M are 6 1 1 phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN
PDIP6 PDIP6 CASE 646BZ CASE 646BX
silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package.
MARKING DIAGRAM Features
• High Voltage: ON ♦ MOC8204M, BVCEO = 400 V H11D1 ♦ H11D1M, BVCEO = 300 V VXYYQ ♦ H11D3M, BVCEO = 200 V • Safety and Regulatory Approvals: ON = Company Logo ♦ UL1577, 4,170 VACRMS for 1 Minute H11D1 = Specific Device Code • DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with
Applications
this option) • Power Supply Regulators X = One−Digit Year Code YY = Digit Work Week • Digital Logic Inputs Q = Assembly Package Code • Microprocessor Inputs • Appliance Sensor Systems
ORDERING INFORMATION
• Industrial Controls See detailed ordering and shipping information on page 410 of this data sheet. © Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0 MOC8204M/D