BC307/308/309 BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES VCEO Parameter
Collector-Emitter Voltage
: BC307
: BC308/309
Collector-Emitter Voltage
: BC307
: BC308/309 Value Units -50
-30 V
V -45
-25 V
V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 Symbol
BVCEO Parameter
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309 Test Condition
IC= -2mA, IB=0 Collector-Emitter Breakdown Voltage
: BC307
: BC308/309 IC= -10µA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 ICES Collector Cut-off Current …
