KSP94 KSP94
High Voltage Transistor
• High Collector-Emitter Voltage: VCEO= -400V
• Low Collector-Emitter Saturation Voltage
• Complement to KSP44 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO Collector-Base Voltage Parameter Value
-400 Units
V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage IC -6 V Collector Current -300 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO Parameter
Collector-Base Breakdown Voltage Test Condition
IC= -100µA, IE=0 Min.
-400
-400 V -6 V BVCES Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 ICBO Collector Cut-off Current VCB= -300V, VE=0 ICES Collector Cut-off Current VCE= -400V, VBE=0V IEBO Emitter Cut-off Current VBE= -4V, IC=0 hFE1
hFE2
hFE3
hFE4 DC Current Gain VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA VCE (sat)1
VCE (sat)2 Collector-Emitter Saturation Voltage 40 …
