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Silicon planar medium power PNP transistor
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR ZTX749
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. Transition
Frequency fT Output Cpacitance Cobo 55 Switching Times ton
toff 100 TYP. MAX. UNIT CONDITIONS. MHz IC=-100mA,
VCE=-5V f=100MHz pF VCB=-10V f=1MHz 40 ns 450 ns IC=-500mA,
VCC=-10V
IB1=IB2=-50mA 160
100 THERMAL CHARACTERISTICS
SYMBOL MAX. UNIT 175
116
70 °C/W
°C/W
°C/W Rth(j-amb)1
Rth(j-amb)2
Rth(j-case) Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 200 Thermal Resistance (°C/W) Max Power Dissipation -(Watts) 2.5
2.0 C
1.5 Am 1.0 0.5
0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u
re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=0.5 D=0.2
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