Datasheet NTE262 - NTE Electronics DARLINGTON TRANSISTOR, NPN, 100 V, TO-220 — Ficha de datos
Part Number: NTE262
Descripción detallada
Manufacturer: NTE Electronics
Description: DARLINGTON TRANSISTOR, NPN, 100 V, TO-220
Docket:
NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and lowspeed switching applications.
Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D CollectorEmitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low CollectorEmitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Specifications:
- C-E Breakdown Voltage: 100 V
- Current Rating: 5 A
- DC Current Gain Min (hfe): 4.0
- Mounting Type: 5
- Number of Cross References: 293
- Package / Case: TO-220
- Voltage Rating: 100 V
RoHS: Yes
Accessories:
- Fairchild - TIP115
- Fairchild - TIP127