Datasheet PBSS301ND - NXP TRANSISTOR, NPN, 20 V, 4 A, SSOT-6 — Ficha de datos

NXP PBSS301ND

Part Number: PBSS301ND

Descripción detallada

Manufacturer: NXP

Description: TRANSISTOR, NPN, 20 V, 4 A, SSOT-6

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Docket:
PBSS301ND
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev.

03 -- 7 September 2007 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Collector Emitter Voltage V(br)ceo: 20 V
  • Collector Emitter Voltage Vces: 420 mV
  • Current Ic @ Vce Sat: 6 A
  • Current Ic Continuous a Max: 4 A
  • DC Current Gain Min: 300
  • DC Current Gain: 500 mA
  • Gain Bandwidth ft Typ: 100 MHz
  • Mounting Type: SMD
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SSOT-6
  • Power Dissipation Pd: 1.1 W
  • Power Dissipation Ptot Max: 1.1 W
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SSOT
  • Transistor Polarity: NPN
  • Transistor Type: General Purpose

RoHS: Yes